Advances in Nonvolatile Memory and Storage Technology (Woodhead Publishing Series in Electronic and Optical Materials 64)

Advances in Nonvolatile Memory and Storage Technology (Woodhead Publishing Series in Electronic and Optical Materials 64)

By: Yoshio Nishi (editor)Hardback

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Description

New solutions are needed for future scaling down of nonvolatile memory. Advances in Non-volatile Memory and Storage Technology provides an overview of developing technologies and explores their strengths and weaknesses. After an overview of the current market, part one introduces improvements in flash technologies, including developments in 3D NAND flash technologies and flash memory for ultra-high density storage devices. Part two looks at the advantages of designing phase change memory and resistive random access memory technologies. It looks in particular at the fabrication, properties, and performance of nanowire phase change memory technologies. Later chapters also consider modeling of both metal oxide and resistive random access memory switching mechanisms, as well as conductive bridge random access memory technologies. Finally, part three looks to the future of alternative technologies. The areas covered include molecular, polymer, and hybrid organic memory devices, and a variety of random access memory devices such as nano-electromechanical, ferroelectric, and spin-transfer-torque magnetoresistive devices. Advances in Non-volatile Memory and Storage Technology is a key resource for postgraduate students and academic researchers in physics, materials science, and electrical engineering. It is a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials, and portable electronic devices. * Provides an overview of developing nonvolatile memory and storage technologies and explores their strengths and weaknesses* Examines improvements to flash technology, charge trapping, and resistive random access memory* Discusses emerging devices such as those based on polymer and molecular electronics, and nanoelectromechanical random access memory (RAM)

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About Author

Professor Yoshio Nishi is a Professor in the Department of Electrical Engineering and by courtesy in the Department of Material Science and Engineering. He was Director of the Stanford Nanofabrication Facility of National Nanotechnology Infrastructure Network and is now Director of Research of Stanford Center for Integrated Systems at Stanford University, USA

Contents

Part 1 Flash technologies, charge trapping and resistive random access memory (RRAM): 3D NAND flash memory; Multilevel cell (MLC) NAND flash memory for ultra-high density storage devices; Phase change memory (PCM); Modelling of RRAM; Metal oxide resistive-RAM (OxRAM); Conductive bridging RAM (CBRAM); Silicon nanocrystal (Si-nc), split-gate, charge trap memories for embedded applications; Nanowire phase change memory (PCM); Memristors. Part 2 Emerging technologies: Spin-transfer-torque magnetic random access memory (STT-MRAM); Organic memories: Molecular, hybrid and polymer memory technologies; Nanoelectromechanical RAM; Ferroelectric memory.

Product Details

  • publication date: 17/06/2014
  • ISBN13: 9780857098030
  • Format: Hardback
  • Number Of Pages: 532
  • ID: 9780857098030
  • ISBN10: 0857098039

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  • 1st Class Delivery: Yes
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