Epitaxial Growth of Nitrides on Germanium

Epitaxial Growth of Nitrides on Germanium

By: Lieten (author)Paperback

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Description

A comprehensive guide to the physical properties of III-Nitrides, which allow the fabrication of many devices such as high electron mobility transistors and blue light emitting diodes, this work presents a simple but effective method for altering the fixed behavior of nitrides in order to obtain crystalline germanium on silicon--a timely exploration, as some research begins to turn toward the interactions between germanium devices and silicon technology. This study provides researchers with a detailed look at the formation of crystalline nitrides on germanium, germanium on silicon, and electrochemical measurements.

About Author

Ruben Lieten has a PhD in applied science and centers his research on epitaxial growth and characterization of III-Nitrides, Ge3N4, and germanium. In 2008 he joined the Interuniversity Microelectronics Centre in Belgium to continue research on epitaxial growth by molecular beam epitaxy.

Product Details

  • ISBN13: 9789054874850
  • Format: Paperback
  • Number Of Pages: 162
  • ID: 9789054874850
  • ISBN10: 9054874856

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