Epitaxial Growth of Nitrides on Germanium

Epitaxial Growth of Nitrides on Germanium

By: Lieten (author)Paperback

Up to 2 WeeksUsually despatched within 2 weeks


A comprehensive guide to the physical properties of III-Nitrides, which allow the fabrication of many devices such as high electron mobility transistors and blue light emitting diodes, this work presents a simple but effective method for altering the fixed behavior of nitrides in order to obtain crystalline germanium on silicon--a timely exploration, as some research begins to turn toward the interactions between germanium devices and silicon technology. This study provides researchers with a detailed look at the formation of crystalline nitrides on germanium, germanium on silicon, and electrochemical measurements.

About Author

Ruben Lieten has a PhD in applied science and centers his research on epitaxial growth and characterization of III-Nitrides, Ge3N4, and germanium. In 2008 he joined the Interuniversity Microelectronics Centre in Belgium to continue research on epitaxial growth by molecular beam epitaxy.

Product Details

  • ISBN13: 9789054874850
  • Format: Paperback
  • Number Of Pages: 162
  • ID: 9789054874850
  • ISBN10: 9054874856

Delivery Information

  • Saver Delivery: Yes
  • 1st Class Delivery: Yes
  • Courier Delivery: Yes
  • Store Delivery: Yes

Prices are for internet purchases only. Prices and availability in WHSmith Stores may vary significantly