Part I. Thin Film Silicon Solar Cells: 1. Light management using periodic textures for enhancing photocurrent and conversion efficiency in thin-film silicon solar cells; 2. Panasonic's thin film silicon technologies for advanced photovoltaics; 3. Hydrogen-plasma etching of thin amorphous silicon layers for heterojunction interdigitated back-contact solar cells; 4. Employing lc-SiOX:H as n-type layer and back TCO replacement for high-efficiency a-Si:H/lc-Si:H tandem solar cells; 5. A vertical PN junction utilizing the impurity photovoltaic effect for the enhancement of ultra-thin film silicon solar cells; 6. Impact on thin film silicon properties and solar cell parameters of texture generated by laser annealing and chemical etching of ZnO:Al; 7. Novel intermediate reflector layer for optical and morphological tuning in the micromorph thin film tandem cell; 8. Development of nanocrystalline silicon based multi-junction solar cell technology for high volume manufacturing; 9. SnO2:F with very high haze value and transmittance in near infrared wavelength for use as front transparent conductive oxide films in thin-film silicon solar cells; Part II. Novel Silicon-Based Devices and Solar Cells: 10. Amorphous silicon based betavoltaic devices; 11. SiC monolithically integrated wavelength selector with 4 channels; 12. Design of an optical transmission WDM link using plastic optical fibers; 13. Optoelectronic logic functions using optical bias controlled SiC multilayer devices; 14. Improvement of seed layer smoothness for epitaxial growth on porous silicon; Part III. Materials and Devices Characterization and Simulation: 15. Local junction voltages and radiative ideality factors of a-Si:H solar modules determined by electroluminescence imaging; 16. The dependence of the crystalline volume fraction on the crystallite size for hydrogenated nanocrystalline silicon based solar cells; 17. Carrier lifetime measurements by photoconductance at low temperature on passivated crystalline silicon wafers; 18. Characterization of boron doped amorphous silicon films by multiple internal reflection infrared spectroscopy; 19. Emission spectra study of plasma enhanced chemical vapor deposition of intrinsic, n1, and p1 amorphous silicon thin films; 20. On the origin of the Urbach Rule and the Urbach Focus; 21. Ultrafast optical measurements of acoustic phonon attenuation in amorphous and nanocrystalline silicon; 22. Stress analysis of free-standing silicon oxide films using optical interference; 23. Effect of RF or VHF plasma on nanocrystalline silicon thin film structure: insight from OES and Langmuir Probe measurements; Part IV. Defects and Transport: 24. Defect densities and carrier lifetimes in oxygen doped nanocrystalline Si; 25. Microstructure characterization of amorphous silicon films by effusion measurements of implanted helium; 26. Temperature dependence of 1/f noise and electrical conductivity measurements on p-type a-Si:H devices; 27. Study of surface passivation of CZ c-Si by PECVD a-Si:H films: a comparison between quasi-steady-state and transient photoconductance decay measurement; Part V. Nanostructured Silicon and Related Novel Materials: 28. Charge transport in nanocrystalline germanium/hydrogenated amorphous silicon mixed-phase thin films; 29. Low temperature annealing of inkjet-printed silicon thin-films for photovoltaic and thermoelectric devices; 30. Shape evolution of faceted silicon nanocrystals upon thermal annealing in an oxide matrix; 31. Crystallization kinetics of plasma-produced amorphous silicon nanoparticles.