This book consists of four chapters to address at different modeling levels for different nanoscale MOS structures (Single- and Multi-Gate MOSFETs). The collection of these chapters in the book are attempted to provide a comprehensive coverage on the different levels of electrostatics and transport modeling for these devices, and relationships between them. In particular, the issue of quantum transport approaches, analytical predictive 2D/3D modeling and design-oriented compact modeling. It should be of interests to researchers working on modeling at any level, to provide them with a clear explanation of theapproaches used and the links with modeling techniques for either higher or lower levels.
Monte-Carlo Simulation of Ultra-Thin Film Silicon on Insulator MOSFETs (F Gamiz, C Sampedro, L Donetti and A Godoy); Analytical Models and Electrical Characterisation of Advanced MOSFETs in the Quasi-Ballistic Regime (R Clerc and G Ghibaudo); Physics-Based Analytical Modeling of Nanoscale Multigate MOSFETs (T A Fjeldly and U Monga); Compact Modeling of Double and Triple Gate MOSFETs (B Iniguez, R Ritzenthaler and F Lime).