Semiconductors and electronic materials have benefitted from photoacoustic and photothermal techniques since the late 1970s. This volume, the fourth in a series on photothermal and photoacoustic science and technology (PPST), presents a comprehensive review of the diverse progress made in PPST of semiconductors and electronic materials during the 1990s. The 10 chapters review leading research activities in several subfields of PPST. These include applications of novel analytical and/or experimental techniques to traditional semiconductor materials and devices as well as applications of conventional techniques to novel materials and devices. As with other volumes in the series, this text is useful as a reference for practising scientists and engineers and as a supplement to upper-level graduate courses in various areas of PPST and its subfields.
Photothermal and Photoacoustic Characterization of Porous Silicon Structures; The Peculiarities of Contrast Formation in Photoacoustic Microscopy of Semiconductors and the Role of the Stressed State; Optical Detection of Photothermal Phenomena in Operating Electronic Devices - Temperature and Defect Imaging; Photothermal Radiometric Study of Implanted Semiconductor; Nonradiative Investigation of Impurity and Defect Levels in Si and GaAs by Piezoelectric Photoacoustic Spectroscopy (PPAS); Effect of the Confined Plasma on Thermal Wave Fields in Semiconductor Devices; Photothermal Characterization of Semiconductors; Nonlinear Photoacoustic and Photothermal Phenomena in Semiconductors; Carrier Transport Contribution to Thermoelastic and Electronic Deformation in Semiconductors; Photothermal Spectroscopy of Ceramic and Nano-Crystal II-IV Compound Semiconductors, Together with Ternary and Multinary Compounds.