Strain-Induced Effects in Advanced MOSFETs: (Computational Microelectronics Softcover reprint of the original 1st ed. 2011)
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Strain-Induced Effects in Advanced MOSFETs: (Computational Microelectronics Softcover reprint of the original 1st ed. 2011)

Strain-Induced Effects in Advanced MOSFETs: (Computational Microelectronics Softcover reprint of the original 1st ed. 2011)

By
Viktor Sverdlov (Author)  

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Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given. 50 Tables, black and white; XIV, 252 p.
  • Contributor: Viktor Sverdlov
  • Imprint: Springer Verlag GmbH
  • ISBN13: 9783709119334
  • Number of Pages: 252
  • Packaged Dimensions: 168x240mm
  • Packaged Weight: 459
  • Format: Paperback
  • Publisher: Springer Verlag GmbH
  • Release Date: 2016-08-23
  • Series: Computational Microelectronics
  • Binding: Paperback / softback

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