VLSI Fabrication Principles: Silicon and Gallium Arsenide (2nd Revised edition)

VLSI Fabrication Principles: Silicon and Gallium Arsenide (2nd Revised edition)

By: Sorab K. Ghandhi (author), L. Lane (author), L. Lane (contributor)Hardback

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Description

There is a common core to the behaviour and technology of semi-conductor materials. Silicon and gallium arsenide are two materials particularly suited to Very Large Scale Integrated schemes (VLSI). Produced from a decade's worth of feedback from students and industry colleagues, this new edition integrates discussion of elemental (silicon) and compound (gallium arsenide) technologies. The book emphasizes fabrication principles for such circuits as CMOS, BiPolar, MOS and PET. These different technologies are introduced separately and then integrated into complete circuits.

Contents

Material Properties. Phase Diagrams and Solid Solubility. Crystal Growth and Doping. Diffusion. Epitaxy. Ion Implantation. Native Films. Deposited Films. Etching and Cleaning. Lithographic Processes. Device and Circuit Fabrication. Appendix. Index.

Product Details

  • ISBN13: 9780471580058
  • Format: Hardback
  • Number Of Pages: 864
  • ID: 9780471580058
  • weight: 1292
  • ISBN10: 0471580058
  • edition: 2nd Revised edition

Delivery Information

  • Saver Delivery: Yes
  • 1st Class Delivery: Yes
  • Courier Delivery: Yes
  • Store Delivery: Yes

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